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Qinhuangdao Intrinsic Crystal Technology Co., Ltd.

4 Inch Mono Silicon Wafer, 4′′ Silicon Wafers, IC Grade Low Resistivitycz Si Wafer for manufacturer / supplier in China, offering 4′′ Silicon Wafers for Power Semiconductor Devices, Znse Plano-Convex Biconvex Concave Optical Lens, Viewport – Barium Flouride (BaF2) on CF Flanges and so on.

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4′′ Silicon Wafers for Power Semiconductor Devices

FOB Price: Get Latest Price
Min. Order: 1 Piece
Port: Beijing, China
Production Capacity: 50000
Payment Terms: T/T, Western Union

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Basic Info
  • Model NO.: D1′~D8"
  • Type: Flat
  • Shape: Round
  • Lenses Color: Grey
  • Customized: Customized
  • Trademark: ICC
  • Origin: Qinhuangdao China
  • Usage: Optical
  • Transmittance: >95%
  • Material: 4 Inch Mono Silicon Wafer
  • Certification: RoHS, ISO9001
  • Coating: Polish
  • Transport Package: Wrapped in Silk Paper
  • HS Code: 9001909090
Product Description
4'' Silicon Wafers for Power Semiconductor Devices


According your require, we can produce customized silicon wafers, no matter what diameter,

thickness or type. We expect to service you.

In addition, we have the stock of many kinds products.

Product Description
 Name: 4 Inch Prime Grade Low Resistivity CZ Si Wafer for Price
Size3"/4"/5"/6"
Growth methodCZ
Diameter76.2±0.3mm / 100±0.4mm / 125±0.5mm / 150±0.5mm
Orientation<111>/<100>
TypeN/P
DopantP-type:Boron
N-type:Phos./As./Sb.
Purity≥11N(99.999999999%)
Oxygen Content≤18 New PPMA
Carborn Content≤1 New PPMA
DislocationNone
Resistivity≥0.001Ω·cm                                                             
Thickness≥200um, or according to your Requirement
MOQ200pcs 
PackagePacked in Polyethylene foam box,500pcs/box
PriceAccording to your specification,especially resistivity and thickness.

Packing4'' Silicon Wafers for Power Semiconductor Devices
4" lapped wafer
Diameter: 100 -/+ 0.5mm
Orientation: <111> -/+ 0.5 and <100> -/+ 0.5
Flat width: 32.5 -/+ 2.5mm
Thickness: >=180μ M
THK deviation: -/+ 5μ M or -/+ 10μ M
TTV: <5μ M
Resistivity(Ω @m): 0.001-60 ohm-cm for both P&N type
RRG(C-6MM): ≤ 20%(N type), ≤ 10%(P type)
Oxygen Concent(ASTM-79): 20-36ppma
Carbon Concent: ≤ 1ppma, ≤ 5%
4'' Silicon Wafers for Power Semiconductor Devices

Qinhuangdao Intrinsic Crsytal Technology Co., Ltd offers a handful of standard 4" silicon wafer options, also referred to as 100mm silicon wafers, for our customer's urgent needs. These are considered stocking parts and ship from our shelf in San Jose, California and usually within the same day as the request.

As silicon wafer manufacturing technology has progressed, driven primarily by the needs of the integrated circuit "chip" manufacturers, silicon wafer sizes have gradually increased in size from 25mm silicon wafers to the current largest available diameter of 450mm silicon wafers. The larger the diameter of the silicon wafer, the larger the surface area and the more chips that can be manufactured from a single wafer. More chips per silicon wafer equals lower cost per chip for the chip maker.

As diameters have increased and the semiconductor industry has moved to the new larger diameters of silicon wafers, all of the major silicon manufacturers have ceased production of smaller diameter wafers. There are no longer any major silicon manufacturers in the world that are manufacturing 4" silicon wafers, also known as 100mm silicon wafers. This has caused a constriction of supply of 4" silicon wafers in the marketplace while creating opportunities for smaller secondary players to begin production, though not in the volumes that were manufactured in the past.

These events have conspired to make the sourcing of 4" silicon wafers a challenge yet these wafers are still critical components for Universities and Research and Development facilities around the globe. We have met the challenge and can meet your demands for 4" silicon wafers. Get a Quick Quote for one of our standard products below or, if you don't see what you need, submit a product quote form and let us find what you need.
4'' Silicon Wafers for Power Semiconductor Devices

Diameter (mm)TypeDopantGradeResistivity (ohm-cm)Thickness (um)FrontsideBacksideFlatsFlatness (um)Particles 
100PBPrime10.0 - 20.0500 - 550PolishedEtched1 Major<5<10@>0.30Quick Quote
100NPHPrime10.0 - 20.0500 - 550PolishedEtched1 Major<5<10@>0.30Quick Quote
100PBTest10.0 - 20.0475 - 575PolishedEtched1 Major<10<10@>0.30Quick Quot
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